公开(公告)号：US12031077B2

公开(公告)日：2024-07-09

申请号：US17805332

申请日：2022-06-03

申请人： ENF TECHNOLOGY CO., LTD.

发明人： Hyeon Woo Park ,  Seok Hyeon Nam ,  Myung Ho Lee ,  Myung Geun Song

IPC分类号： C09K13/10 ,  C09K13/00 ,  C09K13/04 ,  C23F1/00 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  H01L21/306 ,  H01L21/3213

CPC分类号： C09K13/10 ,  C09K13/00 ,  C09K13/04 ,  C23F1/00 ,  C23F1/14 ,  C23F1/16 ,  C23F1/44 ,  H01L21/30604 ,  H01L21/32134

摘要： The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

公开(公告)号：US20240102174A1

公开(公告)日：2024-03-28

申请号：US18536762

申请日：2023-12-12

申请人： Hutchinson Technology Incorporated

发明人： Douglas P. Riemer ,  Peter F. Ladwig

IPC分类号： C23F1/16 ,  C09K13/06 ,  C23F1/02 ,  G11B5/48 ,  H05K1/02 ,  H05K3/06

CPC分类号： C23F1/16 ,  C09K13/06 ,  C23F1/02 ,  G11B5/484 ,  H05K1/0277 ,  H05K3/067 ,  H05K2203/0779

摘要： An etch chemistry solution for treating metallic surfaces in which the etch chemistry solution includes an oxidizing agent and gluconic acid. The etch chemistry solution may also include an oxidizing agent and a short-chained polyethylene polymer glycol or a short-chained polyethylene copolymer glycol. The metallic surfaces are usually used in circuits such as flexible circuits.

公开(公告)号：US20230349050A1

公开(公告)日：2023-11-02

申请号：US18301347

申请日：2023-04-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyungsuk MOON ,  Seungkoo SHIN ,  Minjung KIM ,  Sanghwang PARK

IPC分类号： C23C28/00 ,  G01N21/3563 ,  C23C14/18 ,  C23C16/40 ,  C23C16/24 ,  C23C14/02 ,  C23F1/16 ,  C23C14/58 ,  C23C16/56

CPC分类号： C23C28/322 ,  G01N21/3563 ,  C23C14/185 ,  C23C16/401 ,  C23C16/24 ,  C23C14/025 ,  C23F1/16 ,  C23C14/5873 ,  C23C16/56 ,  G01N2021/3595

摘要： A method of fabricating sample wafers includes forming silver particles on a surface of a wafer, forming nanowires on the wafer, removing the silver particles, and terminating dangling bond sites from surfaces of the nanowires with deuterium.

公开(公告)号：US20180277407A1

公开(公告)日：2018-09-27

申请号：US15989887

申请日：2018-05-25

申请人： TOSHIBA MEMORY CORPORATION

发明人： Shinsuke MURAKI ,  Hiroaki YAMADA ,  Yuya AKEBOSHI ,  Katsuhiro SATO

IPC分类号： H01L21/67 ,  C23F1/16 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/28

CPC分类号： H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

摘要： A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US20180250854A1

公开(公告)日：2018-09-06

申请号：US15448653

申请日：2017-03-03

申请人： Ford Global Technologies, LLC

发明人： Paul Kenneth Dellock ,  Thomas Musleh ,  LaRon Michelle Brown ,  Michael A. Musleh ,  Stuart C. Salter

IPC分类号： B29C45/00 ,  C23C18/31 ,  C23F1/16

CPC分类号： B29C45/0001 ,  B29C45/1618 ,  B29C45/162 ,  B29K2009/06 ,  B29K2069/00 ,  B29L2031/30 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/24 ,  C23C18/31 ,  C23C18/32 ,  C23C18/38 ,  C23F1/16

摘要： A molded metallized polymeric structure includes a metal plate-able polymer component having a metallized surface wherein the component includes one or more locking members. The molded metallized polymeric structure additionally includes a polymer resin coupled to one or more binding regions of the metallized surface wherein the polymer resin is positioned to be in contact with the one or more locking members. The molded metallized polymeric structure has one or more visually exposed portions of the metallized surface.

公开(公告)号：US20180240603A1

公开(公告)日：2018-08-23

申请号：US15959065

申请日：2018-04-20

申请人： PACESETTER, INC.

发明人： David R. Bowen ,  Ralph Jason Hemphill

IPC分类号： H01G9/055 ,  H01G9/00 ,  C23F1/16 ,  A61N1/39 ,  H01G9/045 ,  H01G9/26

CPC分类号： H01G9/055 ,  A61N1/3956 ,  A61N1/3968 ,  C23F1/16 ,  C25F3/04 ,  H01G9/0032 ,  H01G9/045 ,  H01G9/26

摘要： A capacitor and a method of processing an anode metal foil are presented. The method includes electrochemically etching the metal foil to form a plurality of tunnels. Next, the etched metal foil is disposed within a widening solution to widen the plurality of tunnels. Exposed surfaces of the etched metal foil are then oxidized. The method includes removing a section of the etched metal foil, where the section of the etched metal foil includes exposed metal along an edge. The section of the etched metal foil is placed into a bath comprising water to form a hydration layer over the exposed metal on the section of the etched metal foil. The method also includes assembling the section of the etched metal foil having the hydration layer as an anode within a capacitor.

公开(公告)号：US20180173345A1

公开(公告)日：2018-06-21

申请号：US15894873

申请日：2018-02-12

申请人： Ethan Pfeiffer

发明人： Ethan Pfeiffer

IPC分类号： G06F3/044 ,  B81C1/00 ,  H01L21/033 ,  B82Y40/00

CPC分类号： G06F3/044 ,  B81C1/00476 ,  B82Y40/00 ,  C23F1/16 ,  G06F2203/04103 ,  H01L21/0331 ,  Y10S148/10 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/893

摘要： This disclosure teaches a method for producing a nano metal mesh. A brittle layer can be deposited onto a flexible substrate, the brittle layer having a thickness on the flexible substrate. The flexible substrate can be bent to produce a plurality of gaps on the brittle material. A material can be deposited at the surface of the flexible substrate filling the gaps of the brittle layer. Then, the brittle layer can be etched from the flexible substrate using an etchant, a nano metal mesh formed by the material previously in the gaps. The disclosure also teaches a nano metal mesh made using this method.

公开(公告)号：US20180138410A1

公开(公告)日：2018-05-17

申请号：US15869597

申请日：2018-01-12

申请人： TOPPAN PRINTING CO., LTD.

发明人： Daisei FUJITO ,  Kiyoaki NISHITSUJI ,  Takehiro NISHI

IPC分类号： H01L51/00 ,  B05C21/00 ,  C23F1/16 ,  H05B33/10 ,  H01L51/56

CPC分类号： H01L51/0011 ,  B05C21/005 ,  C23C14/042 ,  C23F1/02 ,  C23F1/16 ,  H01L51/56 ,  H05B33/10

摘要： A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

公开(公告)号：US20180082869A1

公开(公告)日：2018-03-22

申请号：US15449308

申请日：2017-03-03

申请人： TOSHIBA MEMORY CORPORATION

发明人： Shinsuke MURAKI ,  Hiroaki YAMADA ,  Yuya AKEBOSHI ,  Katsuhiro SATO

IPC分类号： H01L21/67 ,  H01L21/306 ,  H01L21/28 ,  C23F1/16

CPC分类号： H01L21/67242 ,  C23F1/16 ,  C23F1/26 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67057 ,  H01L21/67075 ,  H01L21/67086

摘要： A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

公开(公告)号：US20170221725A1

公开(公告)日：2017-08-03

申请号：US15264960

申请日：2016-09-14

申请人： Kabushiki Kaisha Toshiba

发明人： Shinsuke MURAKI ,  Katsuhiro Sato ,  Hiroaki Yamada

IPC分类号： H01L21/3213 ,  H01L21/67 ,  C23F1/16

CPC分类号： H01L21/32134 ,  C23F1/14 ,  C23F1/16 ,  C23F1/18 ,  H01L21/32115 ,  H01L21/67086

摘要： In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.