公开(公告)号：US20230122379A1

公开(公告)日：2023-04-20

申请号：US17879134

申请日：2022-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Cheol MIN ,  Keon Yong CHEON ,  Myung Dong KO ,  Yong Hee PARK ,  Sang Hyeon LEE ,  Dong Won KIM ,  Woo Seung SHIN ,  Hyung Suk LEE

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern, a gate structure on the lower pattern and having a gate electrode and a gate insulating film that surround each of the sheet patterns, a gate capping pattern on the gate structure, a gate etching stop pattern between the gate capping pattern and the gate structure, a gate spacer along a sidewall of the gate capping pattern, a source/drain pattern on the gate structure, a gate contact through the gate capping pattern and connected to the gate electrode, upper surfaces of the gate contact and gate spacer being coplanar, and a source/drain contact on the source/drain pattern and connected to the source/drain pattern.