SEMICONDUCTOR DEVICE
    1.
    发明申请

    公开(公告)号:US20220132701A1

    公开(公告)日:2022-04-28

    申请号:US17342995

    申请日:2021-06-09

    Abstract: A semiconductor device includes a first case, a second case coupled to the first case to form an inner space, a memory module disposed within the inner space, and including a module substrate and a plurality of electronic components mounted on the module substrate, and a heat dissipation chamber assembly provided in at least a portion of the first case, and including a heat diffusion chamber in thermal contact with at least one of the electronic components and a sidewall structure extending vertically toward the module substrate to surround the electronic component in thermal contact with the heat diffusion chamber.

    MEMORY DEVICES
    2.
    发明申请
    MEMORY DEVICES 审中-公开

    公开(公告)号:US20200272210A1

    公开(公告)日:2020-08-27

    申请号:US16872896

    申请日:2020-05-12

    Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

    MEMORY DEVICES
    3.
    发明申请
    MEMORY DEVICES 审中-公开

    公开(公告)号:US20190354145A1

    公开(公告)日:2019-11-21

    申请号:US16260278

    申请日:2019-01-29

    Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

    STORAGE DEVICE
    4.
    发明申请

    公开(公告)号:US20250089170A1

    公开(公告)日:2025-03-13

    申请号:US18583215

    申请日:2024-02-21

    Abstract: A storage device includes a first module including a first substrate and at least one first semiconductor chip provided on the first substrate, a second module electrically connected to the first module and including a second substrate and at least one second semiconductor chip provided on the second substrate, a capacitor module provided between the first module and the second module, including at least one capacitor, and electrically connected to at least one of the first and second modules, and a case configured to accommodate the first module, the second module, and the capacitor module therein.

    SOLID STATE DRIVE CASE AND SOLID STATE DRIVE DEVICE USING THE SAME

    公开(公告)号:US20230043293A1

    公开(公告)日:2023-02-09

    申请号:US17715385

    申请日:2022-04-07

    Abstract: A solid state drive case includes a lower cover having a sidewall defining an internal space. The sidewall includes a protrusion disposed on an end portion of the sidewall. An upper cover has a first surface directly contacting the sidewall of the lower cover and a second surface opposite to the first surface. The upper cover has a hole overlapping the protrusion and configured to receive the protrusion. A sealing label is attached to the second surface of the upper cover. The sealing label has an area that is less than an area of an entirety of the second surface of the cover. At least a portion of the sealing label is attached to an end portion of the protrusion.

    MEMORY DEVICES
    6.
    发明申请

    公开(公告)号:US20210294392A1

    公开(公告)日:2021-09-23

    申请号:US17338835

    申请日:2021-06-04

    Abstract: A memory device includes: a first casing; a second casing on the first casing; a memory module in an inner space between the first and second casings; and a plate between the first and second casings, wherein the plate includes an air hole and a wing, and wherein the wing includes: a first segment near an outside of the first and second casings; and a second segment near the inner space, wherein the first segment is located at a level different from a level of the second segment.

Patent Agency Ranking