公开(公告)号：US20240055339A1

公开(公告)日：2024-02-15

申请号：US18229039

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanjoo Park ,  Sunggu Kang ,  Jaechoon Kim ,  Taehwan Kim ,  Sungho Mun ,  Jonggyu Lee

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/367 ,  H01L25/065

CPC classification number: H01L23/49822 ,  H01L24/16 ,  H01L24/32 ,  H01L23/49816 ,  H01L23/3675 ,  H01L25/0657 ,  H01L2224/16227 ,  H01L2224/16145 ,  H01L2224/32146 ,  H01L2224/32235 ,  H01L2225/06513 ,  H01L2225/06589 ,  H01L2924/1435 ,  H01L2924/1431 ,  H01L2924/182

Abstract: A semiconductor package includes a first redistribution structure, a first semiconductor package on the first redistribution structure, the first semiconductor package including a first semiconductor chip which includes a first device layer and a first semiconductor substrate including a through electrode, a second semiconductor chip which is on the first semiconductor chip and includes a second device layer and a second semiconductor substrate, and a molding member surrounding the first semiconductor chip, a second redistribution structure on an upper surface of the molding member, and a second semiconductor package on the second redistribution structure, the second semiconductor package including a third semiconductor chip, wherein the second semiconductor chip is apart from the second semiconductor package in a horizontal direction, and an upper surface of the second semiconductor chip is higher than the upper surface of the molding member.

公开(公告)号：US20240321681A1

公开(公告)日：2024-09-26

申请号：US18505670

申请日：2023-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggu Kang ,  Jaechoon Kim ,  Sungho Mun ,  Hwanjoo Park

IPC: H01L23/46 ,  H05K7/20

CPC classification number: H01L23/46 ,  H05K7/20327

Abstract: Provided is a semiconductor package including a substrate, a first semiconductor device on the substrate, and a heat dissipation structure on the first semiconductor device including a heat dissipation chamber configured to provide an internal space in which a working fluid moves, and a plurality of first isolation walls arranged in the heat dissipation chamber to define a first center channel and a plurality of first vapor channels communicating with each other via the first center channel, wherein each of the plurality of first isolation walls vertically overlaps the first semiconductor device, the first center channel vertically overlaps the first semiconductor device, and each of the plurality of first vapor channels extends from the first center channel in a lateral direction.