公开(公告)号：US20240212782A1

公开(公告)日：2024-06-27

申请号：US18226340

申请日：2023-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho YUN ,  Sungjoon KIM ,  Yukyoung KIM ,  Chaeeun Lee ,  Jongwon Jeong

IPC: G11C29/46 ,  G11C29/12 ,  G11C29/44

CPC classification number: G11C29/46 ,  G11C29/1201 ,  G11C29/44

Abstract: A memory system including: a memory module including a plurality of memory chips; a mirror memory module including a plurality of mirror memory chips corresponding to the plurality of memory chips, a first mirror memory chip of the plurality of mirror memory chips being storing same data as a first memory chip of the plurality of memory chips; and a memory controller configured to, in a system running state in which an operation according to a request of a user is capable of being performed after the memory system is booted, provide the memory module with a command for instructing a normal operation to be performed and provide the mirror memory module with a command for instructing a memory built-in self-test (MBIST) to be performed.

公开(公告)号：US20210013369A1

公开(公告)日：2021-01-14

申请号：US16727496

申请日：2019-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daeyeop HAN ,  Kiwon PARK ,  Jaeyoon KIM ,  Sungjoon KIM ,  Inho KIM

IPC: H01L33/00 ,  H01L25/075

Abstract: Provided a manufacturing method of a semiconductor light emitting device including forming a plurality of light emitting cells that are separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein forming the second planarization layer and dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.