公开(公告)号：US20240004757A1

公开(公告)日：2024-01-04

申请号：US18295457

申请日：2023-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Young LEE ,  Sung-Joon KIM ,  IIho KIM ,  Kyungjin PARK ,  Changho YUN ,  Jinhun JEONG ,  Insu CHOI ,  Kyung-Hee HAN ,  Yukyoung KIM ,  Jinwoo KIM ,  Chaeeun LEE ,  Yunmi HWANG

IPC: G06F11/10 ,  G06F11/07

CPC classification number: G06F11/1068 ,  G06F11/076 ,  G06F11/0793

Abstract: Disclosed is an electronic device including a memory module that includes at least one dynamic random access memory, and a processor configured to access the memory module, determine a corrected error count associated with an address of a corrected error in response to the corrected error being detected when data are read from the memory module, read an error log associated with the corrected error, determine a risk level of the corrected error based on the error log, and schedule a post package repair (PPR) for the address of the corrected error in response to the risk level of the corrected error being high.

公开(公告)号：US20240212782A1

公开(公告)日：2024-06-27

申请号：US18226340

申请日：2023-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho YUN ,  Sungjoon KIM ,  Yukyoung KIM ,  Chaeeun Lee ,  Jongwon Jeong

IPC: G11C29/46 ,  G11C29/12 ,  G11C29/44

CPC classification number: G11C29/46 ,  G11C29/1201 ,  G11C29/44

Abstract: A memory system including: a memory module including a plurality of memory chips; a mirror memory module including a plurality of mirror memory chips corresponding to the plurality of memory chips, a first mirror memory chip of the plurality of mirror memory chips being storing same data as a first memory chip of the plurality of memory chips; and a memory controller configured to, in a system running state in which an operation according to a request of a user is capable of being performed after the memory system is booted, provide the memory module with a command for instructing a normal operation to be performed and provide the mirror memory module with a command for instructing a memory built-in self-test (MBIST) to be performed.