公开(公告)号：US20240313097A1

公开(公告)日：2024-09-19

申请号：US18513740

申请日：2023-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGGIL YANG ,  TAEHYUN KIM ,  TAEWON HA

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate including a first region and a second region; an active region on the first region and a peripheral active region on the second region; a channel pattern on the active region; a peripheral channel pattern on the peripheral active region; a first gate electrode on the channel pattern; and a second gate electrode on the peripheral channel pattern. A linewidth of the second gate electrode is larger than a linewidth of the first gate electrode, and a difference in height between the first and second gate electrodes is smaller than about 10 nm, and a top surface of the second gate electrode has a doubly-concave shape.