公开(公告)号：US10318469B2

公开(公告)日：2019-06-11

申请号：US14620219

申请日：2015-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Soo Jang ,  Gong-Heum Han ,  Chul-Sung Park ,  Jang-Woo Ryu ,  Chang-Yong Lee ,  Tae-Seong Jang

IPC: G06F13/36 ,  G06F13/42

Abstract: A semiconductor memory device comprises a memory cell array and a data inversion circuit. The data inversion circuit is configured to receive a first unit data and a second unit data stored in the memory cell array through different first data lines, determine, while the first unit data is transmitted to a data input/output (I/O) buffer through a second data line, whether to the invert the second unit data based on a Hamming distance between the first unit data and the second unit data, and transmit the inverted or non-inverted second unit data to the data I/O buffer through the second data line.