公开(公告)号：US20210167004A1

公开(公告)日：2021-06-03

申请号：US16893540

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC: H01L23/498 ,  H01L29/78

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20230187335A1

公开(公告)日：2023-06-15

申请号：US18105955

申请日：2023-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC: H01L23/498 ,  H01L29/78

CPC classification number: H01L23/49844 ,  H01L29/78 ,  H01L23/49811

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20220130970A1

公开(公告)日：2022-04-28

申请号：US17367988

申请日：2021-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Won KANG ,  Tae-Yeol KIM ,  Jeong Ik KIM ,  Rak Hwan KIM ,  Jun Ki PARK ,  Chung Hwan SHIN

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.