公开(公告)号：US20210167004A1

公开(公告)日：2021-06-03

申请号：US16893540

申请日：2020-06-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC分类号： H01L23/498 ,  H01L29/78

摘要： A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20230187335A1

公开(公告)日：2023-06-15

申请号：US18105955

申请日：2023-02-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Donghee SEO ,  Heonbok LEE ,  Tae-Yeol KIM ,  Daeyong KIM ,  Dohyun LEE

IPC分类号： H01L23/498 ,  H01L29/78

CPC分类号： H01L23/49844 ,  H01L29/78 ,  H01L23/49811

摘要： A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

公开(公告)号：US20240178061A1

公开(公告)日：2024-05-30

申请号：US18339569

申请日：2023-06-22

申请人： Samsung Electronics Co., Ltd.

发明人： Donghee SEO ,  Rakhwan KIM ,  Jeongik KIM ,  Chunghwan SHIN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76876 ,  H01L21/7684 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/53266

摘要： An integrated circuit device includes a middle insulating structure on a substrate, a first contact structure passing through the middle insulating structure and extending by a first vertical length from a top surface of the middle insulating structure toward the substrate, and a second contact structure passing through the middle insulating structure. The middle insulating structure may have a top surface extending in a lateral direction at a first vertical level. The second contact structure may extend by a second vertical length greater than the first vertical length from the top surface of the middle insulating structure toward the substrate. The first contact structure may have a first top surface extending planar along an extension line of the top surface of the middle insulating structure. The second contact structure may have a second top surface, which may be convex in a direction away from the substrate.