公开(公告)号：US20240035159A1

公开(公告)日：2024-02-01

申请号：US18223606

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungrim KIM ,  Youngeun KIM ,  Youngjun KIM ,  Jihoon KIM ,  Taekjung KIM ,  Dongju CHANG

IPC: C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45561 ,  C23C16/448 ,  C23C16/45589

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

公开(公告)号：US20240315009A1

公开(公告)日：2024-09-19

申请号：US18386916

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon KIM ,  Dohyung KIM ,  Youngjun KIM ,  Taekjung KIM ,  Yeonju OH ,  Jaejin LEE ,  Dongju CHANG ,  Seohyeong JANG

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053 ,  H10B12/315

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. A second work function of the second gate electrode is greater than a first work function of the first gate electrode.