公开(公告)号：US12129545B2

公开(公告)日：2024-10-29

申请号：US17554253

申请日：2021-12-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Jaakko Anttila

IPC: C23C16/448

CPC classification number: C23C16/448

Abstract: The current disclosure relates to a precursor capsule for holding a precursor for a vapor deposition process. The precursor capsule comprises a vapor-permeable shell configured to define a precursor space, and to allow precursor in vapor form to leave the precursor capsule under vaporization conditions. The disclosure further relates to a precursor vessel comprising capsules according to the current disclosure, to a vapor deposition apparatus and a method.

公开(公告)号：US12104253B2

公开(公告)日：2024-10-01

申请号：US18208084

申请日：2023-06-09

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Elaina Babayan ,  Sarah White ,  Vijay Venugopal ,  Jonathan Bakke

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455 ,  G01F1/00 ,  G05D11/00 ,  G05D11/13 ,  G05D16/00 ,  G05D16/04 ,  H01L21/00 ,  H01L21/66 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45553 ,  G01F1/00 ,  G05D11/00 ,  G05D11/132 ,  G05D16/00 ,  G05D16/04 ,  G05D16/0402 ,  H01L21/00 ,  H01L21/67253 ,  H01L22/00

Abstract: An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.

公开(公告)号：US20240279808A1

公开(公告)日：2024-08-22

申请号：US18419021

申请日：2024-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsoo PARK ,  Songyi BAEK ,  Hyungwoo CHOI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC classification number: C23C16/45561 ,  C23C16/4405 ,  C23C16/448 ,  C23C16/52

Abstract: A gas supply system includes a manifold for supplying gases for processing the substrate to a process chamber; a cleaning gas supply line supplying a cleaning gas to the manifold; a first inert gas supply line supplying a first inert gas to the cleaning gas supply line; a first opening/closing valve opening and closing the cleaning gas supply line; a reaction gas supply line supplying a reaction gas to the manifold; a source gas supply line provided with a vaporizer and supplying the source gas to the manifold; a second inert gas supply line supplying a second inert gas to the manifold and branching out to a carrier gas supply line connected to the vaporizer and a curtain gas supply line bypassing the vaporizer; a second opening/closing valve selectively opening or closing the carrier gas supply line and the curtain gas supply line; and a controller.

公开(公告)号：US20240218506A1

公开(公告)日：2024-07-04

申请号：US18395801

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Jonathan Bakke ,  Arjav Prafulkumar Vashi ,  Todd Robert Dunn ,  Paul Ma ,  Jacqueline Wrench ,  Jereld Lee Winkler ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/52

Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

公开(公告)号：US20240167150A1

公开(公告)日：2024-05-23

申请号：US18429750

申请日：2024-02-01

Applicant: Edmund Optics, Inc.

Inventor： Joel Bagwell ,  Nathan Carlie

IPC: C23C16/02 ,  B24B13/00 ,  C23C14/02 ,  C23C14/30 ,  C23C14/58 ,  C23C16/448 ,  H01J37/06 ,  H01S3/094 ,  C23C14/34

CPC classification number: C23C16/0263 ,  B24B13/0037 ,  C23C14/02 ,  C23C14/30 ,  C23C14/5813 ,  C23C16/448 ,  H01J37/06 ,  H01S3/094076 ,  C23C14/34

Abstract: A finishing and coating apparatus combines finishing and coating optical components into one vacuum apparatus. The apparatus includes a vacuum system, a substrate holder, a finisher including a laser engine and a beam delivery apparatus, and a coating source. The finisher is configured to finish the optical components prior to coating the optical components. The finisher includes a laser engine and a laser beam delivery apparatus configured to direct a beam from the laser engine toward each of the optical components.

公开(公告)号：US11976356B2

公开(公告)日：2024-05-07

申请号：US17639288

申请日：2020-09-03

Applicant: FUJIKIN INCORPORATED

Inventor： Takatoshi Nakatani ,  Atsushi Hidaka ,  Ichiro Tokuda ,  Keisuke Nakatsuji

IPC: C23C16/448 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/52

Abstract: A vaporization supply apparatus 1 includes a preheating section 2 for preheating a liquid raw material L, a vaporization section 3 provided on top of the preheating section 2 for heating and vaporizing the preheated liquid raw material L sent from the preheating section 2, a flow rate control device 4 provided on top of the vaporization section 3 for controlling the flow rate of a gas G sent from the vaporization section 3, and heaters 5 for heating the preheating section 2, the vaporization section 3 and the flow rate control device 4.

公开(公告)号：US11923105B2

公开(公告)日：2024-03-05

申请号：US17887844

申请日：2022-08-15

Applicant: The University of Houston System

Inventor： Goran Majkic ,  Venkat Selvamanickam

IPC: H01B12/06 ,  C23C16/02 ,  C23C16/40 ,  C23C16/448 ,  C23C16/54 ,  H01B13/00 ,  H01B13/008 ,  H10N60/01

CPC classification number: H01B12/06 ,  C23C16/0209 ,  C23C16/408 ,  C23C16/448 ,  C23C16/545 ,  H01B13/00 ,  H01B13/0026 ,  H01B13/008 ,  H10N60/0464

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

公开(公告)号：US11781216B2

公开(公告)日：2023-10-10

申请号：US18096867

申请日：2023-01-13

Applicant: MetOx Technologies, Inc.

Inventor： Mikhail Novozhilov ,  Alex Ignatiev

IPC: C23C16/18 ,  C23C16/448 ,  C23C16/455 ,  C23C16/48

CPC classification number: C23C16/18 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/482

Abstract: A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

公开(公告)号：US20230313365A1

公开(公告)日：2023-10-05

申请号：US18332638

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hyeonjin SHIN ,  Hoijoon KIM ,  Wonsik AHN ,  Mirine LEEM

IPC: C23C16/30 ,  B22F7/00 ,  C23C16/46 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L31/032

CPC classification number: C23C16/305 ,  B22F7/008 ,  C23C16/46 ,  C23C16/448 ,  C23C16/45502 ,  C23C16/45514 ,  H01L21/02568 ,  H01L21/02581 ,  H01L21/28568 ,  H01L31/0324 ,  B22F2207/01 ,  B22F2302/45

Abstract: Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

公开(公告)号：US20230307151A1

公开(公告)日：2023-09-28

申请号：US18327413

申请日：2023-06-01

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Frédéric SCHUSTER ,  Fernando LOMELLO ,  Francis MAURY ,  Alexandre MICHAU ,  Raphaël BOICHOT ,  Michel PONS

IPC: G21C21/02 ,  B32B5/28 ,  B32B15/04 ,  C23C16/18 ,  C23C16/30 ,  C23C16/448 ,  C23C16/56 ,  G21C3/07 ,  G21C3/20

CPC classification number: G21C21/02 ,  B32B5/28 ,  B32B15/04 ,  C23C16/18 ,  C23C16/30 ,  C23C16/448 ,  C23C16/56 ,  G21C3/07 ,  G21C3/20

Abstract: Composite nuclear component comprising i) a support containing a substrate comprising a metallic material and a ceramic material (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a DLI-MOCVD deposition process. The composite nuclear component has improved resistance to oxidation and/or migration of undesired material. The invention also relates to the use of the composite nuclear component for combating oxidation and/or degradation of the ceramic material contained in the substrate.