公开(公告)号：US20240061345A1

公开(公告)日：2024-02-22

申请号：US18207510

申请日：2023-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kibum LEE ,  Taesoo SHIN ,  Seulgi OK ,  Sungwook HWANG

IPC: G03F7/20

CPC classification number: G03F7/7065

Abstract: A method of detecting defects of a wafer including generating a composite wafer map comprising defect points by combining a plurality of wafer level maps generated by measuring the wafer according to the respective process operations; sorting the defect points according to defect clusters using positions of the defect points included in the composite wafer map; and detecting an initial process operation, from among the respective process operations, in which a defect occurred, using operation information, for each of the defect clusters.