公开(公告)号：US20240061345A1

公开(公告)日：2024-02-22

申请号：US18207510

申请日：2023-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kibum LEE ,  Taesoo SHIN ,  Seulgi OK ,  Sungwook HWANG

IPC: G03F7/20

CPC classification number: G03F7/7065

Abstract: A method of detecting defects of a wafer including generating a composite wafer map comprising defect points by combining a plurality of wafer level maps generated by measuring the wafer according to the respective process operations; sorting the defect points according to defect clusters using positions of the defect points included in the composite wafer map; and detecting an initial process operation, from among the respective process operations, in which a defect occurred, using operation information, for each of the defect clusters.

公开(公告)号：US20240127425A1

公开(公告)日：2024-04-18

申请号：US18195190

申请日：2023-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwook HWANG ,  Tae Soo SHIN ,  Seulgi OK ,  Kibum LEE

IPC: G06T7/00 ,  G01N23/2251 ,  G06T7/70

CPC classification number: G06T7/001 ,  G01N23/2251 ,  G06T7/70 ,  G01N2223/418 ,  G01N2223/6116 ,  G06T2207/10061 ,  G06T2207/20084 ,  G06T2207/20132 ,  G06T2207/30148

Abstract: A defect detection device includes: a memory configured to store a layout image indicating a circuit pattern and indicating a dummy pattern; and a controller comprising an artificial neural network configured to learn the layout image, the controller being configured to: determine, based on an inspection image obtained by photographing an area including a defect on a wafer, whether the defect is in a first area in which the circuit pattern is positioned or in a second area in which the dummy pattern is positioned, by using the artificial neural network, and determine a type of the defect based on whether the defect is positioned is in the first area or in the second area.

公开(公告)号：US20250048717A1

公开(公告)日：2025-02-06

申请号：US18745614

申请日：2024-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hokyun AN ,  Kibum LEE ,  Jungmin CHO ,  Sunggyu CHOI

IPC: H01L21/8238 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324

Abstract: A method of manufacturing a semiconductor device includes forming, on a substrate, a semiconductor material layer including germanium, forming a diffusion material layer in an upper portion of the substrate adjacent to the semiconductor material layer by performing a first heat treatment on the semiconductor material layer, removing the semiconductor material layer, recrystallizing the diffusion material layer by performing a second heat treatment on the diffusion material layer, and forming a fin-type structure by removing at least a portion of the substrate and at least a portion of the diffusion material layer. The diffusion material layer includes germanium diffused from the semiconductor material layer. A germanium concentration in the fin-type structure decreases from an upper surface of the fin-type structure toward a lower surface of the fin-type structure along a vertical direction perpendicular to a top surface of the substrate.

公开(公告)号：US20220165608A1

公开(公告)日：2022-05-26

申请号：US17574665

申请日：2022-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyun IM ,  Kibum LEE ,  Daehyun KIM ,  Ju Hyung WE ,  Sungmi YOON

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/146 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.