公开(公告)号：US20180374709A1

公开(公告)日：2018-12-27

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun KIM ,  Yuri BARSUKOV ,  Vladimir VOLYNETS ,  Dali LIU ,  Sang-jin AN ,  Beom-jin YOO ,  Sang-heon LEE ,  Shamik PATEL

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01L21/02164 ,  H01L21/02315 ,  H01L21/31116

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.