公开(公告)号：US20170263643A1

公开(公告)日：2017-09-14

申请号：US15609578

申请日：2017-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNIL SHIM ,  WONSEOK CHO ,  WOONKYUNG LEE

IPC: H01L27/11582 ,  H01L23/538 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/24 ,  H01L29/78 ,  H01L45/00

CPC classification number: H01L27/11582 ,  H01L23/5384 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L29/7827 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.

公开(公告)号：US20150093865A1

公开(公告)日：2015-04-02

申请号：US14563432

申请日：2014-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNIL SHIM ,  WONSEOK CHO ,  WOONKYUNG LEE

IPC: H01L27/115 ,  H01L27/24

CPC classification number: H01L27/11582 ,  H01L23/5384 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L29/7827 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.

Abstract translation: 半导体器件包括多个第一绝缘层和多个第二层，其交替地和垂直地堆叠在基板上。 多个第二层中的每一个包括由第二绝缘层水平隔开的水平电极。 接触插塞穿透多个第二绝缘层和多个第二层中的第二绝缘层。