公开(公告)号：US10438666B2

公开(公告)日：2019-10-08

申请号：US16043964

申请日：2018-07-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-yoon Park ,  Wan-dong Kim ,  Seung-bum Kim ,  Deok-woo Lee ,  You-se Kim ,  Se-hwan Park ,  Jin-woo Park

IPC: G11C16/16 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

Abstract: A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

公开(公告)号：US10720218B2

公开(公告)日：2020-07-21

申请号：US16563034

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-yoon Park ,  Wan-dong Kim ,  Seung-bum Kim ,  Deok-woo Lee ,  You-se Kim ,  Se-hwan Park ,  Jin-woo Park

IPC: G11C16/04 ,  G11C16/16 ,  G11C16/34 ,  G11C16/32 ,  G11C11/56 ,  G11C29/52

Abstract: A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.