-
1.
公开(公告)号:US20250140727A1
公开(公告)日:2025-05-01
申请号:US18891191
申请日:2024-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wonbin Shin , Jihye Shim , Seokkyu Lee
Abstract: Provided is a wiring structure including a wiring insulating layer including a first insulating layer and a second insulating layer on the first insulating layer, and a wiring pattern that penetrates the second insulating layer and extends into the first insulating layer, wherein a portion of a side surface of the wiring pattern in contact with the first insulating layer is a curved surface with a first surface roughness, and a portion of the side surface of the wiring pattern in contact with the second insulating layer is a flat surface with a second surface roughness that is less than the first surface roughness.
-
公开(公告)号:US20250132202A1
公开(公告)日:2025-04-24
申请号:US18816416
申请日:2024-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seokkyu Lee , Wonbin Shin , Kiseok Kim , Jihye Shim , Jeonggi Jin
IPC: H01L21/768
Abstract: A method of manufacturing a semiconductor package with a semiconductor chip including an active surface and an inactive surface opposite to the active surface is presented. The method includes attaching, to the active surface, a film structure including an insulating layer and a first seed layer contacting the insulating layer. A via hole is formed by penetrating the insulating layer and the first seed layer followed by a descumming the insulating layer and the first seed layer in which the via hole is formed. A second seed layer is formed on the insulating layer and on the first seed layer on which the descum process was performed. A photoresist pattern on the second seed layer enables forming a conductive via by filling both a space defined by the via hole with a conductive material and by filling a space defined by the photoresist pattern with the conductive material.
-
公开(公告)号:US20240194582A1
公开(公告)日:2024-06-13
申请号:US18523970
申请日:2023-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seokkyu Lee , Jihye Shim , Kiseok Kim , Wonbin Shin
IPC: H01L23/498 , H01L23/31
CPC classification number: H01L23/49894 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L24/08 , H01L2224/08235
Abstract: A semiconductor package includes a redistribution substrate having a first surface and a second surface opposite to each other, and including a plurality of first photosensitive insulating layers and a plurality of redistribution layers disposed among the plurality of first photosensitive insulating layers; at least one semiconductor chip disposed on the first surface of the redistribution substrate and including a plurality of contact pads electrically connected to the plurality of redistribution layers; a protective insulating layer including a second photosensitive insulating layer disposed on the second surface of the redistribution substrate and having a plurality of contact holes, and a non-photosensitive insulating layer disposed on an outer surface of the second photosensitive insulating layer and an internal sidewall of each of the plurality of contact holes; and a plurality of under bump metallurgy (UBM) connectors each having a UBM pad disposed on the protective insulating layer and a UBM via disposed in a respective contact hole of the plurality of contact holes and electrically connected to the plurality of redistribution layers.
-
-