公开(公告)号：US20240096797A1

公开(公告)日：2024-03-21

申请号：US18330672

申请日：2023-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINJAE KANG ,  YEONGGIL KIM ,  WOOKYUNG YOU ,  WOOJIN LEE ,  JAYEONG HEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53295 ,  H01L27/088

Abstract: Disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer in first and second trenches between the conductive structures. A width in a second direction of the first trench may be less than a width in the second direction of the second trench. The first interlayer dielectric layer may include a lower interlayer dielectric layer and an upper interlayer dielectric layer on the lower interlayer dielectric layer, sequentially stacked. A mechanical strength of the upper interlayer dielectric layer may be greater than a mechanical strength of the lower interlayer dielectric layer.

公开(公告)号：US20210043561A1

公开(公告)日：2021-02-11

申请号：US16877088

申请日：2020-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONGGIL KIM ,  Jongmin Baek ,  Wookyung You ,  Kyuhee Han

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a contact structure connected to an active region. A first insulating layer is disposed on a barrier dielectric layer and has a first hole connected to the contact structure. A second insulating layer is disposed on the first insulating layer and has a trench connected to the first hole. The second insulating layer has an extended portion along a side wall of the first hole. A width of the first hole less the space occupied by the extended portion is defined as a second hole. A wiring structure including a conductive material is connected to the contact structure. A conductive barrier is disposed between the conductive material and the first and second insulating layers. An etch stop layer is disposed between the first and second insulating layers and between the extended portion of the second insulating layer and a side wall of the first hole.