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1.发明公开公开(公告)号：US20240085812A1
公开(公告)日：2024-03-14
申请号：US18230472
申请日：2023-08-04
发明人： Kyuhee Han , Koungmin Ryu , Kyeongbeom Park , Jongmin Baek , Wookyung You , Woojin Lee , Juhee Lee
IPC分类号： G03F7/00 , G03F7/20 , G03F7/40 , H01L21/033
CPC分类号： G03F7/70925 , G03F7/2004 , G03F7/40 , H01L21/033
摘要： A substrate processing apparatus includes a chamber having an internal space configured to process a substrate loaded therein; a light source configured to emit light on the substrate to harden a photoresist pattern coated on the substrate; and a transparent division part provided between the substrate and the light source, wherein the transparent division part divides the chamber into a first space, in which the light source is provided, and a second space, in which the substrate is provided.
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公开(公告)号：US11862514B2
公开(公告)日：2024-01-02
申请号：US17984874
申请日：2022-11-10
发明人： Sanghoon Ahn , Woojin Lee , Kyuhee Han
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H10B12/00 , H01L23/48 , H01L23/28
CPC分类号： H01L21/7682 , H01L21/76831 , H01L21/76834 , H01L21/76877 , H01L23/5226 , H01L23/5329 , H01L21/76895 , H01L23/28 , H01L23/48 , H10B12/482
摘要： An integrated circuit device according to the inventive concepts includes lower wiring structures formed on a substrate, an air gap arranged between the lower wiring structures, a capping layer covering an upper surface of the air gap, an etch stop layer conformally covering an upper surfaces of the lower wiring structures and the capping layer and having a protrusion and recess structure, an insulating layer covering the etch stop layer, and an upper wiring structure penetrating the insulating layer and connected to the upper surface of the lower wiring structure not covered with the etch stop layer, wherein the upper wiring structure covers a portion of an upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structures.
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公开(公告)号：US11646263B2
公开(公告)日：2023-05-09
申请号：US17155126
申请日：2021-01-22
发明人： Wookyung You , Kyeongbeom Park , Sungbin Park , Suhyun Park , Jongmin Baek , Jangho Lee , Seonghun Lim , Deokyoung Jung , Kyuhee Han
IPC分类号： H01L21/00 , H01L23/522 , H01L23/528
CPC分类号： H01L23/5226 , H01L23/528 , H01L23/5228
摘要： A semiconductor device includes a first insulating layer disposed on a substrate, a first wiring disposed in the first insulating layer, a first insulating barrier layer disposed on the first insulating layer, an etch-stop layer disposed on the first insulating barrier layer and having an area smaller than an area of the first insulating barrier layer in a plan view, a resistive metal pattern disposed on the etch-stop layer, a second insulating barrier layer disposed on the resistive metal pattern, a second insulating layer covering the first and second insulating barrier layers, a second wiring disposed in the second insulating layer, and a first conductive via disposed between the resistive metal pattern and the second wiring to penetrate through the second insulating barrier layer and the second insulating layer and electrically connect the resistive metal pattern and the second wiring.
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公开(公告)号：US11195696B2
公开(公告)日：2021-12-07
申请号：US16850252
申请日：2020-04-16
发明人： Dongkyu Shin , Sangki Nam , Soonam Park , Akira Koshiishi , Kyuhee Han
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683 , H01L21/3065 , H01J37/063
摘要： An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.
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公开(公告)号：US11133249B2
公开(公告)日：2021-09-28
申请号：US16877088
申请日：2020-05-18
发明人： Yeonggil Kim , Jongmin Baek , Wookyung You , Kyuhee Han
IPC分类号： H01L23/522 , H01L21/768 , H01L23/528
摘要： A semiconductor device includes a contact structure connected to an active region. A first insulating layer is disposed on a barrier dielectric layer and has a first hole connected to the contact structure. A second insulating layer is disposed on the first insulating layer and has a trench connected to the first hole. The second insulating layer has an extended portion along a side wall of the first hole. A width of the first hole less the space occupied by the extended portion is defined as a second hole. A wiring structure including a conductive material is connected to the contact structure. A conductive barrier is disposed between the conductive material and the first and second insulating layers. An etch stop layer is disposed between the first and second insulating layers and between the extended portion of the second insulating layer and a side wall of the first hole.
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公开(公告)号：US10199325B2
公开(公告)日：2019-02-05
申请号：US15792911
申请日：2017-10-25
发明人： Taejin Yim , Jongmin Baek , Deokyoung Jung , Kyuhee Han , Byunghee Kim , Jiyoung Kim , Naein Lee , Sangshin Jang
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/522 , H01L23/532 , H01L21/768
摘要： A semiconductor device is provided. The semiconductor device includes first metal lines on a lower layer, a dielectric barrier layer provided on the lower layer to cover side and top surfaces of the first metal lines, an etch stop layer provided on the dielectric barrier layer to define gap regions between the first metal lines, an upper insulating layer on the etch stop layer, and a conductive via penetrating the upper insulating layer, the etch stop layer, and the dielectric barrier layer to contact a top surface of a first metal line. The etch stop layer includes first portions on the first metal lines and second portions between the first metal lines. The second portions of the etch stop layer are higher than the first portions.
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公开(公告)号：US20210391254A1
公开(公告)日：2021-12-16
申请号：US17155126
申请日：2021-01-22
发明人： Wookyung You , Kyeongbeom Park , Sungbin Park , Suhyun Park , Jongmin Baek , Jangho Lee , Seonghun Lim , Deokyoung Jung , Kyuhee Han
IPC分类号： H01L23/522 , H01L23/528
摘要： A semiconductor device includes a first insulating layer disposed on a substrate, a first wiring disposed in the first insulating layer, a first insulating barrier layer disposed on the first insulating layer, an etch-stop layer disposed on the first insulating barrier layer and having an area smaller than an area of the first insulating barrier layer in a plan view, a resistive metal pattern disposed on the etch-stop layer, a second insulating barrier layer disposed on the resistive metal pattern, a second insulating layer covering the first and second insulating barrier layers, a second wiring disposed in the second insulating layer, and a first conductive via disposed between the resistive metal pattern and the second wiring to penetrate through the second insulating barrier layer and the second insulating layer and electrically connect the resistive metal pattern and the second wiring.
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8.发明授权公开(公告)号：US10522332B2
公开(公告)日：2019-12-31
申请号：US16421433
申请日：2019-05-23
发明人： Yeongkwang Lee , Sunggil Kang , Sang Ki Nam , Kwangyoub Heo , Kyuhee Han
IPC分类号： H01J37/317 , H01J37/32 , H01L21/683
摘要： A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.
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9.发明授权公开(公告)号：US10347468B2
公开(公告)日：2019-07-09
申请号：US15870800
申请日：2018-01-12
发明人： Yeongkwang Lee , Sunggil Kang , Sang Ki Nam , Kwangyoub Heo , Kyuhee Han
IPC分类号： H01J37/32 , H01L21/683
摘要： A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.
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公开(公告)号：US11515201B2
公开(公告)日：2022-11-29
申请号：US16872955
申请日：2020-05-12
发明人： Sanghoon Ahn , Woojin Lee , Kyuhee Han
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L27/108
摘要： An integrated circuit device according to the inventive concepts includes lower wiring structures formed on a substrate, an air gap arranged between the lower wiring structures, a capping layer covering an upper surface of the air gap, an etch stop layer conformally covering an upper surfaces of the lower wiring structures and the capping layer and having a protrusion and recess structure, an insulating layer covering the etch stop layer, and an upper wiring structure penetrating the insulating layer and connected to the upper surface of the lower wiring structure not covered with the etch stop layer, wherein the upper wiring structure covers a portion of an upper surface of the capping layer, and a level of the upper surface of the capping layer is higher than a level of the upper surface of the lower wiring structures.
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