公开(公告)号：US20240162278A1

公开(公告)日：2024-05-16

申请号：US18367915

申请日：2023-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYOOHO JUNG ,  JINWOOK LEE ,  JONGYEONG MIN ,  JIYE BAEK ,  YESEUL LEE

IPC: H01G4/012 ,  H01G4/08 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01G4/012 ,  H01G4/085 ,  H01L28/87 ,  H01L28/91 ,  H10B12/315 ,  H10B12/0335

Abstract: A capacitor structure includes; a lower electrode, a dielectric pattern on the lower electrode, an interface structure on the dielectric pattern, and an upper electrode on the interface structure. The dielectric pattern includes an oxide of a metal having 4 valence electrons. The interface structure includes a first interface pattern including a first metal oxide doped with nitrogen, and a second interface including a second metal oxide.