公开(公告)号：US20230386542A1

公开(公告)日：2023-11-30

申请号：US18447950

申请日：2023-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-HOON JANG ,  KYUNGRYUN KIM ,  YOUNG JU KIM ,  SEUNG-JUN LEE ,  YOUNGBIN LEE ,  YEONKYU CHOI

IPC: G11C8/18 ,  G11C7/10

CPC classification number: G11C8/18 ,  G11C7/1045 ,  G11C7/1093 ,  G11C7/1066

Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.

公开(公告)号：US20220293154A1

公开(公告)日：2022-09-15

申请号：US17496003

申请日：2021-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-HOON JANG ,  KYUNGRYUN KIM ,  YOUNG JU KIM ,  SEUNG-JUN LEE ,  YOUNGBIN LEE ,  YEONKYU CHOI

IPC: G11C8/18 ,  G11C7/10

Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.

公开(公告)号：US20180190691A1

公开(公告)日：2018-07-05

申请号：US15647664

申请日：2017-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGBIN LEE ,  GukHyon YON ,  SOOJIN HONG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.

公开(公告)号：US20240329045A1

公开(公告)日：2024-10-03

申请号：US18742453

申请日：2024-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN-HOON JANG ,  KYUNGRYUN KIM ,  YOUNG JU KIM ,  SEUNG-JUN LEE ,  YOUNGBIN LEE ,  YEONKYU CHOI

IPC: G01N33/574 ,  G01N33/50

CPC classification number: G01N33/574 ,  G01N33/5091

Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.