公开(公告)号：US20230275054A1

公开(公告)日：2023-08-31

申请号：US18086086

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YUNSUN JANG ,  Moorym CHOI

IPC: H01L23/00 ,  H10B41/27 ,  H10B43/27 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L24/08 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/0657 ,  H01L25/18 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor device includes a first substrate structure including a substrate, circuit elements, and first bonding metal layers, and a second substrate structure directly on the first substrate structure. The second substrate structure includes a plate layer comprising a conductive material, gate electrodes stacked below the plate layer, channel structures passing through the gate electrodes and each including a channel layer, separation regions penetrating through the gate electrodes and extending in first and second directions and source contacts in the plate layer and disposed on the separation regions. The source contacts extend in the second direction. Second bonding metal layers are connected to the first bonding metal layers. The plate layer is in direct contact with lateral side surfaces of the source contacts and an upper end of the channel layer of each of the channel structures, and is electrically connected to the source contacts and the channel layer.