公开(公告)号：US20200243338A1

公开(公告)日：2020-07-30

申请号：US16551930

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-A LEE ,  Yeonsook KIM ,  Inji LEE

IPC: H01L21/225 ,  H01L29/167 ,  H01L21/02 ,  H01L21/322 ,  H01L21/306 ,  H01L21/324

Abstract: An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cm3 and the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less.

公开(公告)号：US20240395862A1

公开(公告)日：2024-11-28

申请号：US18509925

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM ,  Yoon-Hee LEE ,  Yechan KIM

IPC: H01L29/06 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; source/drain patterns spaced apart in a first direction on the semiconductor substrate; and channel patterns on the semiconductor substrate, wherein at least one of the channel patterns is between adjacent source/drain patterns among the source/drain patterns, wherein at least one of the channel patterns includes a plurality of semiconductor patterns, and the plurality of semiconductor patterns are spaced apart from each other in a second direction that is perpendicular to an upper surface of the semiconductor substrate, wherein the semiconductor substrate includes a {110} crystal plane, wherein at least one of the channel patterns includes a surface pattern, wherein the surface pattern includes first surfaces and second surfaces, wherein the first surfaces include protruding edges, wherein the second surfaces are respectively connected to the first surfaces through protruding edges, and wherein the protruding edges are arranged in a third direction.

公开(公告)号：US20230141135A1

公开(公告)日：2023-05-11

申请号：US17977013

申请日：2022-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junga LEE ,  Yeonsook KIM ,  Wooseung JUNG

IPC: H01L29/78 ,  H01L27/108 ,  H01L29/15

CPC classification number: H01L29/7843 ,  H01L27/10805 ,  H01L29/155

Abstract: An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely covering a surface of the SRB layer, wherein the SRB layer includes a silicon germanium (SiGe) epitaxial layer including germanium (Ge) at a first concentration of about 2.5 at % to about 18 at %, and the multi-stack has a superlattice structure in which a plurality of silicon (Si) layers and a plurality of SiGe layers are alternately provided.

公开(公告)号：US20230005960A1

公开(公告)日：2023-01-05

申请号：US17702408

申请日：2022-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided that includes a base substrate, an insulating film on the base substrate, and an upper substrate on the insulating film. The insulating film includes a crystalline insulating material. A thickness of the insulating film is about 1 nm to about 1,000 nm, and a thickness of the upper substrate is about 1 nm to about 100 nm.