公开(公告)号：US20240395862A1

公开(公告)日：2024-11-28

申请号：US18509925

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM ,  Yoon-Hee LEE ,  Yechan KIM

IPC: H01L29/06 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; source/drain patterns spaced apart in a first direction on the semiconductor substrate; and channel patterns on the semiconductor substrate, wherein at least one of the channel patterns is between adjacent source/drain patterns among the source/drain patterns, wherein at least one of the channel patterns includes a plurality of semiconductor patterns, and the plurality of semiconductor patterns are spaced apart from each other in a second direction that is perpendicular to an upper surface of the semiconductor substrate, wherein the semiconductor substrate includes a {110} crystal plane, wherein at least one of the channel patterns includes a surface pattern, wherein the surface pattern includes first surfaces and second surfaces, wherein the first surfaces include protruding edges, wherein the second surfaces are respectively connected to the first surfaces through protruding edges, and wherein the protruding edges are arranged in a third direction.