公开(公告)号：US20170040494A1

公开(公告)日：2017-02-09

申请号：US15228164

申请日：2016-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Tae GIM ,  Il Ho AHN ,  In Bum YANG ,  Dong Yeoul LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/46 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a semiconductor laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer and the active layer defining a first trench exposing a first portion of the first conductive semiconductor layer, and a second trench exposing a second portion of the first conductive semiconductor layer, a first finger electrode disposed in the exposed portion of the first conductive semiconductor layer in the first trench, an insulating layer disposed on an internal surface of the second trench, and a second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer.

Abstract translation: 半导体发光器件包括包括第一导电半导体层，第二导电半导体层和设置在第一导电半导体层和第二导电半导体层之间的有源层的半导体层叠体，所述第一导电半导体层和有源层限定 暴露第一导电半导体层的第一部分的第一沟槽和暴露第一导电半导体层的第二部分的第二沟槽，设置在第一沟槽中的第一导电半导体层的暴露部分中的第一指状电极， 绝缘层，设置在第二沟槽的内表面上，第二指状电极设置在第二沟槽中的绝缘层上并电连接到第二导电半导体层。