公开(公告)号：US20220115369A1

公开(公告)日：2022-04-14

申请号：US17559152

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Kyu RYU ,  Min-Su KIM ,  Yong-Geol KIM ,  Dae-Seong LEE

IPC: H01L27/02 ,  H01L23/552 ,  G03F1/36 ,  H01L27/118 ,  G06F30/398

Abstract: A semiconductor device is provided. The semiconductor device includes a first hard macro; a second hard macro spaced apart from the first hard macro in a first direction by a first distance; a head cell disposed in a standard cell area between the first hard macro and the second hard macro, the head cell being configured to perform power gating of a power supply voltage provided to one from among the first hard macro and the second hard macro; a plurality of first ending cells disposed in the standard cell area adjacent to the first hard macro; and a plurality of second ending cells disposed in the standard cell area adjacent to the second hard macro, the head cell not overlapping the plurality of first ending cells and the plurality of second ending cells.

公开(公告)号：US20190214377A1

公开(公告)日：2019-07-11

申请号：US16105165

申请日：2018-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Kyu RYU ,  Min-Su KIM ,  Yong-Geol KIM ,  Dae-Seong LEE

IPC: H01L27/02 ,  G06F17/50 ,  H01L23/552 ,  H01L27/118 ,  G03F1/36

CPC classification number: H01L27/0207 ,  G03F1/36 ,  G06F17/5081 ,  H01L23/552 ,  H01L27/11807 ,  H01L2027/11874 ,  H01L2027/11892

Abstract: A semiconductor device is provided. The semiconductor device includes a first hard macro; a second hard macro spaced apart from the first hard macro in a first direction by a first distance; a head cell disposed in a standard cell area between the first hard macro and the second hard macro, the head cell being configured to perform power gating of a power supply voltage provided to one from among the first hard macro and the second hard macro; a plurality of first ending cells disposed in the standard cell area adjacent to the first hard macro; and a plurality of second ending cells disposed in the standard cell area adjacent to the second hard macro, the head cell not overlapping the plurality of first ending cells and the plurality of second ending cells.