公开(公告)号：US20220118582A1

公开(公告)日：2022-04-21

申请号：US17401105

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Ki HONG ,  Youg Hee LEE ,  Byoung Ho Kwon ,  Kun Tack LEE

IPC: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  H01L21/67 ,  H01L21/306

Abstract: A chemical mechanical polishing method is provided. A chemical mechanical polishing method comprising providing a polishing pad, supplying a first purging compound having a first temperature onto the polishing pad, supplying a first slurry having a third temperature onto the polishing pad supplied with the first purging compound, supplying a second purging compound having a second temperature lower than the first temperature onto the polishing pad, and supplying a second slurry having a fourth temperature lower than the third temperature onto the polishing pad supplied with the second purging compound.