公开(公告)号：US20140077388A1

公开(公告)日：2014-03-20

申请号：US13750289

申请日：2013-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hong-Pyo HEO ,  Young-soo KWON ,  Jai-kwang SHIN ,  Young-tek OH ,  Hyung-su JEONG

IPC: H01L23/498 ,  H01L21/50

CPC classification number: H01L23/49827 ,  H01L21/50 ,  H01L23/3677 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/0603 ,  H01L2224/06519 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/3303 ,  H01L2224/33519 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a device chip coupled to an electrode chip. The device chip includes a first device electrode on a first substrate, and the electrode chip includes a first pad electrode extending at least partially through a second substrate. The first pad electrode is electrically connected to the first device electrode and includes spaced conductive sections which serve as a heat dissipating structure to transfer heat received from the device chip and the electrode chip. A method for making a semiconductor device includes using the substrate of the electrode chip as a support during thinning the substrate of the device chip.

Abstract translation: 半导体器件包括耦合到电极芯片的器件芯片。 器件芯片包括在第一衬底上的第一器件电极，并且电极芯片包括至少部分延伸穿过第二衬底的第一焊盘电极。 第一焊盘电极电连接到第一器件电极并且包括间隔的导电部分，其用作散热结构以传递从器件芯片和电极芯片接收的热量。 制造半导体器件的方法包括在薄化器件芯片的衬底期间使用电极芯片的衬底作为支撑体。