公开(公告)号：US20140127848A1

公开(公告)日：2014-05-08

申请号：US14152980

申请日：2014-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Hyun CHO ,  Masayoshi KOIKE ,  Yuji IMAI ,  Min Ho KIM ,  Bang Won OH ,  Hun Joo HAHM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

Abstract translation: 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。