公开(公告)号：US20240321961A1

公开(公告)日：2024-09-26

申请号：US18613338

申请日：2024-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongsu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Beomjin Park ,  Inhyun Song ,  Hyumin Yoo ,  Yujin Jeon

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes, a first nano-sheet stack including a plurality of nano-sheets arranged on a fin-type active region extending in a first horizontal direction, a gate line extending in a second horizontal direction on the fin-type active region, a vertical structure contacting the plurality of nano-sheets, and a first gate dielectric layer disposed between the gate line and the plurality of nano-sheets and between the gate line and the vertical structure, wherein the gate line includes a first sub-gate portion disposed under each of the plurality of nano-sheets, the first gate dielectric layer includes a first portion disposed between the gate line and the plurality of nano-sheets, and a second portion disposed between the first sub-gate portion and the vertical structure, and a thickness of the second portion in the second horizontal direction is greater than a thickness of the first portion in the vertical direction.