公开(公告)号：US20190295886A1

公开(公告)日：2019-09-26

申请号：US16238606

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungha CHOI ,  Yuri MASUOKA ,  Yul LEE

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L29/66 ,  H01L21/02 ,  H01L21/285

Abstract: A semiconductor device including an active pattern on a substrate; a gate structure crossing the active pattern; a source/drain pattern on the active pattern at a side of the gate structure; a contact plug on the source/drain pattern; and a conductive pattern between the source/drain pattern and the contact plug, wherein the source/drain pattern includes a barrier layer adjacent to the conductive pattern, and wherein the barrier layer includes an oxygen atom.

公开(公告)号：US20190280123A1

公开(公告)日：2019-09-12

申请号：US16019811

申请日：2018-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yul LEE ,  Yuri MASUOKA

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L21/28

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.

公开(公告)号：US20220102555A1

公开(公告)日：2022-03-31

申请号：US17549985

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yul LEE ,  Yuri MASUOKA

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/28 ,  H01L21/762 ,  H01L29/08

Abstract: A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.