公开(公告)号：US10256167B1

公开(公告)日：2019-04-09

申请号：US15933947

申请日：2018-03-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Noritaka Fukuo ,  Hokuto Kodate ,  Eiichi Fujikura ,  Akinori Yutani ,  Kengo Miura ,  Masaomi Koizumi ,  Hidehito Koseki

IPC: H01L23/31 ,  H01L21/765 ,  H01L21/761 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11526 ,  H01L29/06 ,  H01L23/00 ,  H01L27/092 ,  H01L23/535 ,  H01L29/51 ,  H01L29/40 ,  H01L21/8238 ,  H01L21/56 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768

Abstract: A semiconductor structure includes a field effect transistor located on a semiconductor substrate, a silicon oxide liner contacting at least a portion of the semiconductor substrate, a silicon nitride liner contacting a top surface and a sidewall of the silicon oxide liner and contacting a top surface of the semiconductor substrate in a seal region, a silicon nitride diffusion barrier layer including a planar bottom surface that contacts top surfaces of vertically extending portions of the silicon nitride liner, and a silicon oxide material portion overlying the silicon nitride diffusion barrier layer. A combination of the silicon nitride liner and the silicon nitride diffusion barrier layer constitutes a hydrogen diffusion barrier structure that continuously extends from the seal region and over the field effect transistor.