公开(公告)号：US10103161B2

公开(公告)日：2018-10-16

申请号：US15195377

申请日：2016-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitoshi Ito ,  Masaaki Higashitani ,  Cheng-Chung Chu ,  Jayavel Pachamuthu ,  Tuan Pham

IPC: H01L29/792 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/535 ,  H01L29/06

Abstract: Die cracking of a three dimensional memory device may be reduced by adding offsets to backside contact via structures. Each backside contact via structure can include laterally extending portions that extend along a first horizontal direction adjoined by adjoining portions that extend along a horizontal direction other than the first horizontal direction. In order to preserve periodicity of memory stack structures extending through an alternating stack of insulating layers and electrically conductive layers, the distance between an outermost row of a string of memory stack structures between a pair of backside contact via structures and a most proximal backside contact via structure can vary from a laterally extending portion to another laterally extending portion within the most proximal backside contact via structure. Source shunt lines that are parallel to bit lines can be formed over a selected subset of offset portions of the backside contact via structures.

公开(公告)号：US09917093B2

公开(公告)日：2018-03-13

申请号：US15195446

申请日：2016-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Cheng-Chung Chu ,  Jayavel Pachamuthu ,  Tuan Pham ,  Fumitoshi Ito ,  Masaaki Higashitani

IPC: H01L29/788 ,  H01L27/11556 ,  H01L23/522 ,  H01L21/22 ,  H01L21/768 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/417

CPC classification number: H01L27/11582 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: A three-dimensional memory device includes a plurality of planes, each having a respective alternating stack, strings of memory stack structures which extends through the respective alternating stack, and backside contact via structures vertically extending through the respective alternating stack, extending generally along the first horizontal direction, and laterally separating neighboring pairs of strings of memory stack structures along a second horizontal direction. A first plane includes a first plurality of strings that are laterally spaced apart along the second horizontal direction by a first plurality of backside contact via structures. A second plane laterally shifted from the first plane along the first horizontal direction and including a second plurality of strings that are laterally spaced apart along the second horizontal direction by a second plurality of backside contact via structures which are laterally offset with respect the first plurality of backside contact via structures along the second horizontal direction.