公开(公告)号：US20220399448A1

公开(公告)日：2022-12-15

申请号：US17348328

申请日：2021-06-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Mitsuhiro TOGO ,  Jun AKAIWA ,  Hiroshi NAKATSUJI ,  Masashi ISHIDA

IPC: H01L29/417 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.

公开(公告)号：US20220399447A1

公开(公告)日：2022-12-15

申请号：US17348305

申请日：2021-06-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Jun AKAIWA ,  Hiroshi NAKATSUJI ,  Masashi ISHIDA

IPC: H01L29/417 ,  H01L29/40 ,  H01L29/45 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238

Abstract: A field effect transistor includes a source region and a drain region formed within and/or above openings in a dielectric capping mask layer overlying a semiconductor substrate and a gate electrode. A source-side silicide portion and a drain-side silicide portion are self-aligned to the source region and to the drain region, respectively.