公开(公告)号：US20240196611A1

公开(公告)日：2024-06-13

申请号：US18351235

申请日：2023-07-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Keita YAMAMOTO

IPC: H10B43/27 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a memory film, a vertical semiconductor channel, a dielectric core laterally surrounded by the vertical semiconductor channel, and a drain region overlying the dielectric core and the vertical semiconductor channel. The drain region includes an end cap portion and a hollow tubular portion vertically protruding downward from the end cap portion and laterally surrounding a top tip portion of the dielectric core.