公开(公告)号：US20240306392A1

公开(公告)日：2024-09-12

申请号：US18662077

申请日：2024-05-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ryo MIZUTSU ,  Kento KITAMURA ,  Kentaro YOSHINO ,  Naoki TAKEGUCHI

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H10B80/00 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A device structure includes an alternating stack of insulating layers and electrically conductive layers, a dielectric material portion overlying the alternating stack, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a coaxial double contact via structure. The coaxial double contact via structure includes an inner layer contact via structure contacting the first-type electrically conductive layer; at least one insulating spacer layer that laterally surrounds the inner layer contact via structure; and an outer layer contact via structure including a tubular conductive portion that laterally surrounds the at least one insulating spacer layer and contacting the second-type electrically conductive layer.