公开(公告)号：US20240381644A1

公开(公告)日：2024-11-14

申请号：US18779508

申请日：2024-07-22

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ryo MIZUTSU

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

Abstract: A device structure includes an alternating stack of insulating layers and electrically conductive layers, a stepped dielectric material portion overlying and laterally contacting the alternating stack in the staircase region, and memory opening fill structures extending through the alternating stack. The electrically conductive layers include first electrically conductive layers and second electrically conductive layers overlying the first electrically conductive layers. Coaxial double contact via structures vertically extend through the stepped dielectric material portion. Each of the coaxial double contact via structures includes a respective inner layer contact via structure contacting a respective one of the first electrically conductive layers, and a respective outer layer contact via structure that laterally surrounds the respective inner layer contact via structure and contacts a respective one of the second electrically conductive layers.

公开(公告)号：US20240306392A1

公开(公告)日：2024-09-12

申请号：US18662077

申请日：2024-05-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ryo MIZUTSU ,  Kento KITAMURA ,  Kentaro YOSHINO ,  Naoki TAKEGUCHI

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H10B80/00 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A device structure includes an alternating stack of insulating layers and electrically conductive layers, a dielectric material portion overlying the alternating stack, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a coaxial double contact via structure. The coaxial double contact via structure includes an inner layer contact via structure contacting the first-type electrically conductive layer; at least one insulating spacer layer that laterally surrounds the inner layer contact via structure; and an outer layer contact via structure including a tubular conductive portion that laterally surrounds the at least one insulating spacer layer and contacting the second-type electrically conductive layer.