公开(公告)号：US20230051815A1

公开(公告)日：2023-02-16

申请号：US17399710

申请日：2021-08-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Linghan Chen ,  Raghuveer S. Makala ,  Fumitaka Amano

IPC: H01L23/532 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers. The electrically conductive layers include an intermetallic alloy of aluminum and at least one metal other than aluminum. Memory openings vertically extend through the alternating stack. Memory opening fill structures are located in a respective one of the memory openings and include a respective vertical semiconductor channel and a respective vertical stack of memory elements.

公开(公告)号：US11990413B2

公开(公告)日：2024-05-21

申请号：US17399710

申请日：2021-08-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Linghan Chen ,  Raghuveer S. Makala ,  Fumitaka Amano

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/53219 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53223 ,  H10B41/27 ,  H10B43/27

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers. The electrically conductive layers include an intermetallic alloy of aluminum and at least one metal other than aluminum. Memory openings vertically extend through the alternating stack. Memory opening fill structures are located in a respective one of the memory openings and include a respective vertical semiconductor channel and a respective vertical stack of memory elements.