公开(公告)号：US20200251486A1

公开(公告)日：2020-08-06

申请号：US16268183

申请日：2019-02-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Masanori TSUTSUMI ,  Manabu KAKAZU ,  Raghuveer S. MAKALA ,  Senaka KANAKAMEDALA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11558 ,  H01L27/11529 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.

公开(公告)号：US20200251485A1

公开(公告)日：2020-08-06

申请号：US16268132

申请日：2019-02-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Manabu KAKAZU ,  Takashi YUDA ,  Yuji FUKANO

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00 ,  H01L21/28 ,  H01L21/768

Abstract: A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.