公开(公告)号：US20240321740A1

公开(公告)日：2024-09-26

申请号：US18359697

申请日：2023-07-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takashi INOMATA ,  Li LI ,  Masanori OISUGI

IPC: H01L23/528 ,  H01L23/522 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H10B41/10 ,  H10B41/27 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, where the electrically conductive layers have different lateral extents that decrease along an upward vertical direction from a bottommost insulating layer to a topmost insulating layer of the insulating layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements and a vertical semiconductor channel, and a layer contact via structure vertically extending through a subset of the electrically conductive layers and a subset of the insulating layers that includes the bottommost insulating layer, contacting a top surface of a topmost electrically conductive layer within the subset of the electrically conductive layers, and having a topmost surface below a horizontal plane including a topmost surface of the alternating stack.