公开(公告)号：US10726893B2

公开(公告)日：2020-07-28

申请号：US16217292

申请日：2018-12-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Oleksandr Mosendz

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  H01L43/08

Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

公开(公告)号：US20200043538A1

公开(公告)日：2020-02-06

申请号：US16217292

申请日：2018-12-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Oleksandr Mosendz

IPC: G11C11/16 ,  H01L43/06 ,  H01L43/08 ,  H01L27/22

Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.