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    Gate voltage controlled perpendicular spin orbit torque MRAM memory cell
    1.
    发明授权
    Gate voltage controlled perpendicular spin orbit torque MRAM memory cell 有权

    公开(公告)号：US10276783B2

    公开(公告)日：2019-04-30

    申请号：US15618878

    申请日：2017-06-09

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Goran Mihajlovic ,  Jeffrey S. Lille

    IPC: G11C11/16 ,  H01L43/06 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H01L43/02 ,  H01L43/12

    Abstract: A four terminal magnetoresistive memory cell comprises a magnetic tunnel junction stack, a ferroelectric layer and a non-ferromagnetic spin polarization layer between the magnetic tunnel junction stack and the ferroelectric layer. The magnetic tunnel junction includes a first layer with fixed direction of magnetization, a free layer capable of changing direction of magnetization and an insulation layer between the first layer and the free layer. The non-ferromagnetic spin polarization layer is configured to generate perpendicular spin polarization in response to electrical current through the non-ferromagnetic spin polarization layer and a voltage received at the ferroelectric layer. The perpendicular spin polarization applies a torque on the free layer to change direction of magnetization of the free layer.

    PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL
    3.
    发明申请
    PERPENDICULAR SPIN TRANSFER TORQUE MRAM MEMORY CELL 审中-公开

    公开(公告)号：US20200273510A1

    公开(公告)日：2020-08-27

    申请号：US16283625

    申请日：2019-02-22

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Goran Mihajlovic ,  Tiffany Santos ,  Jui-Lung Li

    IPC: G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22

    Abstract: A perpendicular spin transfer torque MRAM memory cell includes a magnetic tunnel junction that has a free layer, a pinned layer and a tunnel barrier between the free layer and the pinned layer. The free layer has a switchable direction of magnetization perpendicular to the plane of the free layer. A cap layer is provided adjacent to the magnetic tunnel junction. The thickness of the cap layer is increased so that the cap layer acts as a heating layer, which results in a reduction of the current density during writing and increases the write margin. In some embodiments, a resistive heating layer is added to the memory cell, adjacent to the cap layer, in order to achieve the lower current density and increased write margin while also improving signal to noise ration during reading by eliminating shot noise.

    Perpendicular SOT-MRAM memory cell using spin swapping induced spin current
    4.
    发明授权
    Perpendicular SOT-MRAM memory cell using spin swapping induced spin current 有权

    公开(公告)号：US10726893B2

    公开(公告)日：2020-07-28

    申请号：US16217292

    申请日：2018-12-12

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Goran Mihajlovic ,  Oleksandr Mosendz

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  H01L43/08

    Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

    PERPENDICULAR SOT-MRAM MEMORY CELL USING SPIN SWAPPING INDUCED SPIN CURRENT
    7.
    发明申请
    PERPENDICULAR SOT-MRAM MEMORY CELL USING SPIN SWAPPING INDUCED SPIN CURRENT 审中-公开

    公开(公告)号：US20200043538A1

    公开(公告)日：2020-02-06

    申请号：US16217292

    申请日：2018-12-12

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： Goran Mihajlovic ,  Oleksandr Mosendz

    IPC: G11C11/16 ,  H01L43/06 ,  H01L43/08 ,  H01L27/22

    Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

    Cross-point spin accumulation torque MRAM
    10.
    发明授权
    Cross-point spin accumulation torque MRAM 有权

    公开(公告)号：US10134457B1

    公开(公告)日：2018-11-20

    申请号：US15692920

    申请日：2017-08-31

    Applicant: SanDisk Technologies LLC

    Inventor： Goran Mihajlovic ,  Jordan Katine ,  Neil Robertson ,  Neil Smith

    IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22

    Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A plurality of read lines are in a read line layer, and a plurality of write lines are in a write line layer. A plurality of spin accumulation lines are in a spin accumulation line layer disposed between a read line layer and a write line layer. Spin accumulation lines may horizontally cross read lines and write lines. A plurality of vertical magnetoresistive random access memory (MRAM) cells may include polarizers and magnetic tunnel junctions. A vertical MRAM cell may include a polarizer coupled between a spin accumulation line and a write line. A vertical MRAM cell may further include a magnetic tunnel junction coupled between a spin accumulation line and a read line, such that the magnetic tunnel junction and the polarizer are vertically aligned.

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