公开(公告)号：US09870830B1

公开(公告)日：2018-01-16

申请号：US13831133

申请日：2013-03-14

Applicant: SanDisk Technologies LLC

Inventor： Seungjune Jeon

IPC: G11C16/34 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G06F11/10 ,  G11C11/5642

Abstract: Systems, methods and/or devices that enhance the reliability with which data can be stored in and read from a memory utilize an error indicator, obtained from using one reading threshold voltage for decoding, to adaptively determine the reading threshold voltage(s) used for subsequent decoding attempts. For example, in some implementations, the method includes initiating performance of a first read operation, using a first reading threshold voltage, to obtain a first error indicator, and further includes initiating performance of a second set of additional read operations using two or more second reading threshold voltages, the second reading threshold voltages determined in accordance with the first error indicator, to obtain a second error indicator. In some embodiments, when the first error indicator is greater than a first threshold, a difference between two of the second reading threshold voltages is greater than when the first error indicator is less than a first threshold.

公开(公告)号：US10083069B2

公开(公告)日：2018-09-25

申请号：US13928774

申请日：2013-06-27

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Seungjune Jeon ,  Idan Alrod ,  Eran Sharon ,  Dana Lee

IPC: G11C29/00 ,  G06F11/07 ,  G11C29/02 ,  G11C16/34

CPC classification number: G06F11/0751 ,  G11C16/3404 ,  G11C29/021 ,  G11C29/025 ,  G11C29/028

Abstract: A data storage device includes a non-volatile memory and a controller. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a condition associated with a defect in the word line. A first subset of the plurality of storage elements and a second subset of the plurality of storage elements are determined based on an estimated location of the defect. The method further includes determining a first read threshold for the first subset and a second read threshold for the second subset.