公开(公告)号：US20220278209A1

公开(公告)日：2022-09-01

申请号：US17188271

申请日：2021-03-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Teruyuki MINE ,  Hiroyuki OGAWA ,  Masashi ISHIDA

IPC: H01L29/417 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/08

Abstract: A semiconductor structure includes a high voltage field effect transistor having metal-insulator-semiconductor active region contact structures and a low voltage field effect transistor having metal-semiconductor active region contact structures, and at least one of a smaller gate dielectric thickness or a smaller gate length than the high voltage field effect transistor.