公开(公告)号：US10211215B1

公开(公告)日：2019-02-19

申请号：US15895102

申请日：2018-02-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yashushi Ishii ,  Kazuto Watanabe ,  Michiaki Sano ,  Haruki Urata ,  Akira Takahashi ,  Tae-Kyung Kim

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L27/11597 ,  H01L27/28 ,  H01L27/11529 ,  H01L27/105 ,  H01L27/11578 ,  H01L27/11551 ,  H01L27/11514 ,  H01L45/00

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a substrate. Each of the first insulating layers and the first sacrificial material layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion. Memory stack structures are formed through the horizontally-extending portions of the alternating stack. Regions of the non-horizontally-extending portions of the sacrificial material layers are masked with patterned etch mask portions. Unmasked first regions of the non-horizontally-extending portions of the first sacrificial material layers are selectively recessed, and the sacrificial material layers with electrically conductive layers. Each electrically conductive layer can include a vertical plate region and a protrusion region that protrudes above the vertical plate region and having a narrower lateral dimension that the vertical plate region. Metal contact structures can be formed on the protrusion regions without contacting the vertical plate regions.