公开(公告)号：US10538858B2

公开(公告)日：2020-01-21

申请号：US15115154

申请日：2015-02-19

申请人： SCIOCS COMPANY LIMITED

发明人： Masahiro Hayashi ,  Takashi Satoh ,  Naoya Miyoshi ,  Junichi Wada ,  Seiji Sarayama

IPC分类号： C30B19/00 ,  C30B19/06 ,  C30B19/02 ,  C30B19/12 ,  C30B29/40 ,  C30B9/12 ,  C30B29/68

摘要： In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.