SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240412986A1

    公开(公告)日:2024-12-12

    申请号:US18594391

    申请日:2024-03-04

    Abstract: Provided are a substrate processing apparatus and a substrate processing method that are capable of maintaining an etch rate of a substrate within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific region of the substrate when a chemical is supplied to a center of the substrate. The apparatus for processing a substrate includes: a chamber having a processing space; a support unit for supporting and rotating a substrate in the processing space; a liquid discharge unit including a nozzle for discharging a treatment liquid onto a substrate supported by the support unit in a liquid phase; and a liquid supply unit for supplying the treatment liquid to the liquid discharge unit, in which, when viewed from above, the nozzle is spaced apart from a center of the substrate such that when the treatment liquid is supplied to the substrate rotated by the support unit, the treatment liquid is not sprayed by the nozzle at a position overlapping the center of the substrate.

    APPARATUS AND METHOD OF CLEANING COMPONENT

    公开(公告)号:US20250033097A1

    公开(公告)日:2025-01-30

    申请号:US18758101

    申请日:2024-06-28

    Abstract: Disclosed is an apparatus for cleaning a component, the apparatus including: a cleaning fluid supply source; a supply line for receiving cleaning fluid from the cleaning fluid supply source and connected with a first port of the component; a discharge line connected with a second port of the component; and a circulation line branched from the discharge line and connected with a third port of the component.

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