公开(公告)号：US20240071733A1

公开(公告)日：2024-02-29

申请号：US18167303

申请日：2023-02-10

Applicant: SEMES CO., LTD.

Inventor： Su Hyung LEE ,  Ju Yong JANG ,  Hiroaki HORI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32642

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space for treating a substrate; a support unit positioned at the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a first plate at which the substrate is positioned at a top side; a second plate which is positioned at a bottom side of the first plate; and an adhesive layer for adhering the first plate and the second plate to each other, and wherein a top surface of the second plate is divided into a central region including a center of the top surface and an edge region surrounding the central region, and a height of the adhesive layer filled between a bottom surface of the first plate and the top surface of the second plate is substantially different at the central region and at the edge region.