公开(公告)号：US20230032518A1

公开(公告)日：2023-02-02

申请号：US17859000

申请日：2022-07-07

Applicant: SEMES CO., LTD

Inventor： Su Hyung LEE ,  Ga Yeon KIM ,  Sung Ho LEE ,  Ju Yong JANG

IPC: G01R27/26 ,  H01J37/32 ,  G01R31/56

Abstract: An apparatus and a method for non-destructive inspection of quality of an electrostatic chuck are disclosed. The apparatus includes a measurement unit for measuring a first capacitance of a dielectric layer of the electrostatic chuck and for measuring a second capacitance of an electrode installed in the dielectric layer; and a control unit configured to evaluate quality of the electrode, based on the first capacitance and the second capacitance.

公开(公告)号：US20230071392A1

公开(公告)日：2023-03-09

申请号：US17738010

申请日：2022-05-06

Applicant: SEMES CO., LTD.

Inventor： Sung Hun EOM ,  Sung Ho LEE ,  Ju Yong JANG

IPC: B08B3/12 ,  B08B5/02

Abstract: Provided is a substrate treatment apparatus with improved workability. The substrate treatment apparatus includes: a first bath storing a cleaning solution and having a first opening formed in an upper surface thereof; and a first ultrasonic oscillator installed in the first bath and providing ultrasonic waves toward a surface of the cleaning solution exposed by the first opening to form a water film protruding from the surface of the cleaning solution, wherein a substrate is not immersed in the first bath, and a surface of the substrate is placed adjacent to the first opening and cleaned by the water film.

公开(公告)号：US20250140531A1

公开(公告)日：2025-05-01

申请号：US18826134

申请日：2024-09-05

Applicant: SEMES CO., LTD.

Inventor： Sang Woo KIM ,  Jae Kyung LEE ,  Ju Yong JANG

IPC: H01J37/32

Abstract: Disclosed is a substrate processing apparatus including a substrate support unit. The substrate support unit supports a substrate, has at least one pin hole formed vertically therethrough, and accommodates a lift pin therein so as to allow the lift pin to ascend and descend through the pin hole. The substrate support unit includes a ceramic puck on which the substrate is seated, a base plate configured to support the ceramic puck, an adhesive layer for coupling between the ceramic puck and the base plate, and a bush provided around the pin hole. The bush includes a first bush having a tube shape and a second bush coupled to an outer peripheral surface of the first bush, and the first bush includes a protruding portion formed on an upper surface thereof.

公开(公告)号：US20240203690A1

公开(公告)日：2024-06-20

申请号：US18540731

申请日：2023-12-14

Applicant: SEMES CO., LTD.

Inventor： Hyoung Kyu SON ,  Sang Hyun PARK ,  Yun Sang KIM ,  Yoon Seok CHOI ,  Ju Yong JANG

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/3211 ,  H01J2237/002 ,  H01J2237/327

Abstract: Proposed is a substrate treatment apparatus and a plasma density control method, and relates to a technology of controlling non-uniformity of plasma density in a substrate treatment process using plasma so that a plasma sheath is adjusted, thereby precisely controlling the substrate treatment process.

公开(公告)号：US20240071733A1

公开(公告)日：2024-02-29

申请号：US18167303

申请日：2023-02-10

Applicant: SEMES CO., LTD.

Inventor： Su Hyung LEE ,  Ju Yong JANG ,  Hiroaki HORI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32642

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space for treating a substrate; a support unit positioned at the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a first plate at which the substrate is positioned at a top side; a second plate which is positioned at a bottom side of the first plate; and an adhesive layer for adhering the first plate and the second plate to each other, and wherein a top surface of the second plate is divided into a central region including a center of the top surface and an edge region surrounding the central region, and a height of the adhesive layer filled between a bottom surface of the first plate and the top surface of the second plate is substantially different at the central region and at the edge region.